NGTB30N120IHRWG - аналоги и описание IGBT

 

NGTB30N120IHRWG - аналоги, основные параметры, даташиты

Наименование: NGTB30N120IHRWG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 192 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃

Coesⓘ - Выходная емкость, типовая: 124 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB30N120IHRWG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB30N120IHRWG даташит

 0.1. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 1.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 2.1. Size:161K  onsemi
 ngtb30n120ihlwg.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.2. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB , STGWT60H65FB , STGWT60V60DF , NGTB20N120IHR , NGTB20N120IHRWG , NGTB30N120IHR , CRG15T120BNR3S , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , NGTB25N120SWG , NGTG25N120FL2 , NGTG25N120FL2WG .

History: NGTB20N120IHR

 

 

 


 
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