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STGW40H120F2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW40H120F2

Código: GW40H120F2

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 468

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.4

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 37

Capacitancia de salida (Cc), pF: 202

Empaquetado / Estuche: TO247

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STGW40H120F2 Datasheet (PDF)

1.1. stgw40h120df2.pdf Size:699K _igbt

STGW40H120F2
STGW40H120F2

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 40 A • 5 µs minimum short circuit withstand time at 3 3 TJ=150 °C 2 2 1 1 • Safe paralleling TO-247 TO

1.2. stgw40h120f2.pdf Size:329K _igbt

STGW40H120F2
STGW40H120F2

STGW40H120F2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 40 A 3 • 5 µs minimum short circuit withstand time at 2 TJ=150 °C 1 • Tight parameters distribution • Safe paralleling

3.1. stgw40h65fb.pdf Size:1573K _igbt

STGW40H120F2
STGW40H120F2

STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • High speed switching series 3 • Minimized tail current 2 1 • Very low saturation voltage: VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A • Tight parameters distribution •

3.2. stgw40h65dfb.pdf Size:1516K _igbt

STGW40H120F2
STGW40H120F2

STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.60 V (typ.) @ IC = 40 A 3 3 2 2 • Tight parameters distribution 1 1 • Safe paralleling

3.3. stgw40h60dlfb.pdf Size:1485K _igbt

STGW40H120F2
STGW40H120F2

STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 3 • Tight parameters distribution 1 2 • Safe paralleling 1 • L

Otros transistores... NGTG25N120FL2WG , NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGB10NB37LZ , STGW40M120DF3 , STGWA40H120DF2 , STGWA40M120DF3 , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F .

 


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