STGWA40M120DF3 Todos los transistores

 

STGWA40M120DF3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA40M120DF3
   Tipo de transistor: IGBT + Diode
   Código de marcado: G40M120DF3
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 468 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 275 pF
   Qgⓘ - Carga total de la puerta, typ: 125 nC
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de STGWA40M120DF3 - IGBT

 

STGWA40M120DF3 Datasheet (PDF)

 ..1. Size:1030K  st
stgw40m120df3 stgwa40m120df3.pdf

STGWA40M120DF3
STGWA40M120DF3

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 ..2. Size:1031K  st
stgwa40m120df3.pdf

STGWA40M120DF3
STGWA40M120DF3

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 7.1. Size:526K  st
stgwa40h65dfb.pdf

STGWA40M120DF3
STGWA40M120DF3

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 7.2. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGWA40M120DF3
STGWA40M120DF3

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 7.3. Size:699K  st
stgwa40h120df2.pdf

STGWA40M120DF3
STGWA40M120DF3

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

 7.4. Size:819K  st
stgw40h120df2 stgwa40h120df2.pdf

STGWA40M120DF3
STGWA40M120DF3

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very

 7.5. Size:512K  st
stgwa40hp65fb2.pdf

STGWA40M120DF3
STGWA40M120DF3

STGWA40HP65FB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

 7.6. Size:719K  st
stgwa40s120df3.pdf

STGWA40M120DF3
STGWA40M120DF3

STGW40S120DF3, STGWA40S120DF3Trench gate field-stop IGBT, S series 1200 V, 40 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 40 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long l

 7.7. Size:527K  st
stgwa40h65dfb2.pdf

STGWA40M120DF3
STGWA40M120DF3

STGWA40H65DFB2DatasheetTrench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

 7.8. Size:757K  st
stgwa40n120kd.pdf

STGWA40M120DF3
STGWA40M120DF3

STGW40N120KDSTGWA40N120KD40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


STGWA40M120DF3
  STGWA40M120DF3
  STGWA40M120DF3
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top