STGWA40M120DF3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA40M120DF3
Tipo de transistor: IGBT + Diode
Código de marcado: G40M120DF3
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 468 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 275 pF
Qgⓘ - Carga total de la puerta, typ: 125 nC
Paquete / Cubierta: TO247
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STGWA40M120DF3 Datasheet (PDF)
stgw40m120df3 stgwa40m120df3.pdf

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa40m120df3.pdf

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa40h65dfb.pdf

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio
Otros transistores... NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , STGW40M120DF3 , STGWA40H120DF2 , GT30G122 , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB .
History: IXXH30N60C3 | SKM150GB124D | MIXA50WB600TED | KGF30N135NDH | SIW30N60G21B | TA49047 | 1MBH30D-060
History: IXXH30N60C3 | SKM150GB124D | MIXA50WB600TED | KGF30N135NDH | SIW30N60G21B | TA49047 | 1MBH30D-060



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