STGWA40M120DF3 Datasheet and Replacement
Type Designator: STGWA40M120DF3
Type: IGBT + Anti-Parallel Diode
Marking Code: G40M120DF3
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 468 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 275 pF
Qgⓘ - Total Gate Charge, typ: 125 nC
Package: TO247
- IGBT Cross-Reference
STGWA40M120DF3 Datasheet (PDF)
stgw40m120df3 stgwa40m120df3.pdf

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa40m120df3.pdf

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa40h65dfb.pdf

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio
Datasheet: NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , STGW40M120DF3 , STGWA40H120DF2 , CRG75T60AK3HD , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB .
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