STGW80H65FB Todos los transistores

 

STGW80H65FB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW80H65FB

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 469 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 52 nS

Coesⓘ - Capacitancia de salida, typ: 385 pF

Encapsulados: TO247

 Búsqueda de reemplazo de STGW80H65FB IGBT

- Selección ⓘ de transistores por parámetros

 

STGW80H65FB datasheet

 ..1. Size:1471K  st
 stgw80h65fb.pdf pdf_icon

STGW80H65FB

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low

 5.1. Size:1459K  st
 stgw80h65dfb.pdf pdf_icon

STGW80H65FB

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 3 2 2 1 1 VCE(sat) = 1.6 V (typ.) @ IC = 80 A Max247 TO-247 Tight parameter distribution TAB Safe par

 5.2. Size:663K  st
 stgw80h65dfb stgwt80h65dfb.pdf pdf_icon

STGW80H65FB

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 2 3 Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 80 A 1 2 1 Tight parameter distribution TO-247 TO-3P Safe paralleling Positive VCE(s

 8.1. Size:1643K  st
 stgw80v60f.pdf pdf_icon

STGW80H65FB

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance 3 3 Applicati

MOSTRAR MÁS

Otros transistores... NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , STGW40M120DF3 , STGWA40H120DF2 , STGWA40M120DF3 , STGWA40S120DF3 , STGW80H65DFB , MGD623S , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , STGWT80V60F .

History: NGTB50N60L2

 

 

 


 
↑ Back to Top
.