All IGBT. STGW80H65FB Datasheet

 

STGW80H65FB IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW80H65FB
   Type: IGBT
   Marking Code: GW80H65FB
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 469 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 52 nS
   Coesⓘ - Output Capacitance, typ: 385 pF
   Qgⓘ - Total Gate Charge, typ: 414 nC
   Package: TO247

 STGW80H65FB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW80H65FB Datasheet (PDF)

 ..1. Size:1471K  st
 stgw80h65fb.pdf

STGW80H65FB STGW80H65FB

STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low

 5.1. Size:1459K  st
 stgw80h65dfb.pdf

STGW80H65FB STGW80H65FB

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current32211 VCE(sat) = 1.6 V (typ.) @ IC = 80 AMax247 TO-247 Tight parameter distributionTAB Safe par

 5.2. Size:663K  st
 stgw80h65dfb stgwt80h65dfb.pdf

STGW80H65FB STGW80H65FB

STGW80H65DFB, STGWT80H65DFBDatasheetTrench gate field-stop 650 V, 80 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current323 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A121 Tight parameter distributionTO-247TO-3P Safe paralleling Positive VCE(s

 8.1. Size:1643K  st
 stgw80v60f.pdf

STGW80H65FB STGW80H65FB

STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati

 8.2. Size:1592K  st
 stgw80v60df.pdf

STGW80H65FB STGW80H65FB

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 8.3. Size:1562K  st
 stgw80v60df stgwt80v60df.pdf

STGW80H65FB STGW80H65FB

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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