STGWT80V60F Todos los transistores

 

STGWT80V60F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT80V60F

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 469 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 390 pF

Encapsulados: TO3P

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STGWT80V60F datasheet

 ..1. Size:1643K  st
stgwt80v60f.pdf pdf_icon

STGWT80V60F

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance 3 3 Applicati

 4.1. Size:1592K  st
stgwt80v60df.pdf pdf_icon

STGWT80V60F

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution 3 Safe paralleling 3 2 2 1 Low thermal resistance 1 Very fast soft recovery antipa

 4.2. Size:1562K  st
stgw80v60df stgwt80v60df.pdf pdf_icon

STGWT80V60F

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution 3 Safe paralleling 3 2 2 1 Low thermal resistance 1 Very fast soft recovery antipa

 7.1. Size:1471K  st
stgwt80h65fb.pdf pdf_icon

STGWT80V60F

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low

Otros transistores... STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , MBQ40T65FDSC , 70MT060WSP , RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ .

 

 

 


 
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