All IGBT. STGWT80V60F Datasheet

 

STGWT80V60F Datasheet and Replacement


   Type Designator: STGWT80V60F
   Type: IGBT
   Marking Code: GWT80V60F
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 469 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 390 pF
   Qg ⓘ - Total Gate Charge, typ: 448 nC
   Package: TO3P
 

 STGWT80V60F substitution

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STGWT80V60F Datasheet (PDF)

 ..1. Size:1643K  st
 stgwt80v60f.pdf pdf_icon

STGWT80V60F

STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati

 4.1. Size:1592K  st
 stgwt80v60df.pdf pdf_icon

STGWT80V60F

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 4.2. Size:1562K  st
 stgw80v60df stgwt80v60df.pdf pdf_icon

STGWT80V60F

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 7.1. Size:1471K  st
 stgwt80h65fb.pdf pdf_icon

STGWT80V60F

STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SII200N06

Keywords - STGWT80V60F transistor datasheet

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