VS-GB70LA60UF Todos los transistores

 

VS-GB70LA60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GB70LA60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 447 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 111 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.23 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 69 nS
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

VS-GB70LA60UF Datasheet (PDF)

 ..1. Size:150K  vishay
vs-gb70la60uf.pdf pdf_icon

VS-GB70LA60UF

VS-GB70LA60UFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline

 7.1. Size:152K  vishay
vs-gb70na60uf.pdf pdf_icon

VS-GB70LA60UF

VS-GB70NA60UFwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline

 8.1. Size:221K  vishay
vs-gb75yf120n.pdf pdf_icon

VS-GB70LA60UF

VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 8.2. Size:88K  vishay
vs-gb75tp120u.pdf pdf_icon

VS-GB70LA60UF

VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle

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History: MMG200DR060UZA | SKM50GB12V | JNG40T60HS | APT30GF60JU3 | DF300R12KE3 | APT25GP90BDF1 | IRGIB15B60KD1P

 

 
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