IRGP4790 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E GE C C G G VCE(ON) typ. = 1.7V @ IC = 75A En-channel IRGP4790PbFIRGP4790EPbFApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We

IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4790DPbFIRGP4790DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbFIRGP4760EPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 35A EIRGP4750DPbFIRGP4750DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector

IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C G E E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbFIRGP4760DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter