IRGP4790 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4790
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 455 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 140 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 230 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4790 - IGBT
IRGP4790 Datasheet (PDF)
irgp4790.pdf
IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E GE C C G G VCE(ON) typ. = 1.7V @ IC = 75A En-channel IRGP4790PbFIRGP4790EPbFApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We
irgp4790d.pdf
IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4790DPbFIRGP4790DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector
irgp4760.pdf
IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbFIRGP4760EPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin
irgp4740d.pdf
IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola
irgp4750d.pdf
IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 35A EIRGP4750DPbFIRGP4750DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector
irgp4760d.pdf
IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C G E E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbFIRGP4760DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter
Otros transistores... VS-GB70NA60UF , IRGP4266 , MMG100S120B6TN , MMG100W120X6TN , NGTB30N120FL2 , NGTB30N120FL2WG , IRGP4690D , IRGP4266D , FGW75N60HD , IRGP4790D , MMG75S060B6N , 40MT120UHAPBF , 40MT120UHTAPBF , MMG75H120H6HN , MMG75HB120H6HN , MMG75HB120H6UN , MMG75S060B6R .
Liste
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