IRGP4790 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4790
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 455
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 140
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.4
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 70
Capacitancia de salida (Cc), typ, pF: 230
Carga total de la puerta (Qg), typ, nC: 140
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4790 - IGBT
IRGP4790 Datasheet (PDF)
irgp4790.pdf
IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E GE C C G G VCE(ON) typ. = 1.7V @ IC = 75A En-channel IRGP4790PbFIRGP4790EPbFApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We
irgp4790d.pdf
IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4790DPbFIRGP4790DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector
irgp4760.pdf
IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbFIRGP4760EPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin
irgp4740d.pdf
IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola
irgp4750d.pdf
IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 35A EIRGP4750DPbFIRGP4750DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector
irgp4760d.pdf
IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C G E E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbFIRGP4760DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ