40MT120UHTAPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 40MT120UHTAPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 463 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.36 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 380 pF
Qgⓘ - Carga total de la puerta, typ: 399 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de 40MT120UHTAPBF IGBT
40MT120UHTAPBF Datasheet (PDF)
40mt120uhtapbf.pdf

40MT120UHAPbF, 40MT120UHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverserecovery and low VF Al2O3 DBC Optional SMD thermistor (NTC
vs-40mt120uhtapbf.pdf

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF
vs-40mt120uhapbf.pdf

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF
40mt120uhapbf.pdf

40MT120UHAPbF, 40MT120UHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverserecovery and low VF Al2O3 DBC Optional SMD thermistor (NTC
Otros transistores... NGTB30N120FL2 , NGTB30N120FL2WG , IRGP4690D , IRGP4266D , IRGP4790 , IRGP4790D , MMG75S060B6N , 40MT120UHAPBF , BT15T120ANF , MMG75H120H6HN , MMG75HB120H6HN , MMG75HB120H6UN , MMG75S060B6R , IRGP6690D , MM50G120L , MMG100S060B6N , MMG150HB060H6EN .
History: APT44GA60SD30C
History: APT44GA60SD30C



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor | ecg123 | 2n5551 transistor equivalent