40MT120UHTAPBF IGBT. Datasheet pdf. Equivalent

   Type Designator: 40MT120UHTAPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 463 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.36 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 380 pF
   Qgⓘ - Total Gate Charge, typ: 399 nC
   Package: MODULE

40MT120UHTAPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

40MT120UHTAPBF Datasheet (PDF)

..1. Size:323K vishay
40mt120uhtapbf.pdf

40MT120UHAPbF, 40MT120UHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverserecovery and low VF Al2O3 DBC Optional SMD thermistor (NTC

0.1. Size:287K vishay
vs-40mt120uhtapbf.pdf

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF

5.1. Size:287K vishay
vs-40mt120uhapbf.pdf