NGTB75N65FL2WG Todos los transistores

 

NGTB75N65FL2WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB75N65FL2WG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 265 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 48 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

NGTB75N65FL2WG Datasheet (PDF)

 ..1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 2.1. Size:243K  onsemi
 ngtb75n65fl2.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

MOSTRAR MÁS

Otros transistores... MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , NGTB75N60FL2WG , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , FGPF4633 , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN , MMG100J120UZ , MMG100SR120B , MMG100SR120DE , MMG100SR120UA , MMG100SR120UK .

History: MMG75WD120XB6T4N | MMG400D120UA6TC | DAHF100G120SA

 

 
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