NGTB75N65FL2WG - аналоги и описание IGBT

 

NGTB75N65FL2WG - аналоги, основные параметры, даташиты

Наименование: NGTB75N65FL2WG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 265 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃

tr ⓘ - Время нарастания типовое: 48 nS

Coesⓘ - Выходная емкость, типовая: 300 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB75N65FL2WG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB75N65FL2WG даташит

 ..1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 650 V

 2.1. Size:243K  onsemi
 ngtb75n65fl2.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 650 V

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N65FL2WG

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , NGTB75N60FL2WG , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , RJP63F3DPP-M0 , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN , MMG100J120UZ , MMG100SR120B , MMG100SR120DE , MMG100SR120UA , MMG100SR120UK .

 

 

 


 
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