Справочник IGBT. NGTB75N65FL2WG

 

NGTB75N65FL2WG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB75N65FL2WG
   Тип транзистора: IGBT + Diode
   Маркировка: 75N65FL2
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 265 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 48 nS
   Coesⓘ - Выходная емкость, типовая: 300 pF
   Qgⓘ - Общий заряд затвора, typ: 310 nC
   Тип корпуса: TO247

 Аналог (замена) для NGTB75N65FL2WG

 

 

NGTB75N65FL2WG Datasheet (PDF)

 ..1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf

NGTB75N65FL2WG NGTB75N65FL2WG

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 2.1. Size:243K  onsemi
 ngtb75n65fl2.pdf

NGTB75N65FL2WG NGTB75N65FL2WG

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf

NGTB75N65FL2WG NGTB75N65FL2WG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf

NGTB75N65FL2WG NGTB75N65FL2WG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.3. Size:88K  onsemi
 ngtb75n60s.pdf

NGTB75N65FL2WG NGTB75N65FL2WG

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

 6.4. Size:88K  onsemi
 ngtb75n60swg.pdf

NGTB75N65FL2WG NGTB75N65FL2WG

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

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