HGTG27N60C3R IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTG27N60C3R datasheet

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HGTG27N60C3DR TM Data Sheet June 2000 File Number 4262.1 54A, 600V, Rugged UFS Series N-Channel Features IGBT with Anti-Parallel Ultrafast Diode 54A, 600V, TC = 25oC [ /Title This IGBT was designed for optimum performance in the 600V Switching SOA Capability (HGT demanding world of motor control operation as well as other Typical Fall Time at TJ = 150oC . . . . . . . . .

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HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oC Punch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capability of the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

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NPT Series N-Channel IGBT 72 A, 1200 V HGTG27N120BN The HGTG27N120BN is Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar www.onsemi.com transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. C The

Otros transistores... HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , HGTG27N120BN , HGTG27N60C3DR , STGW60V60DF , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 .