HGTG27N60C3R datasheet, подбор замены IGBT

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 hgtg27n60c3r.pdf 

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 hgtg27n60c3dr.pdf 

HGTG27N60C3DR TM Data Sheet June 2000 File Number 4262.1 54A, 600V, Rugged UFS Series N-Channel Features IGBT with Anti-Parallel Ultrafast Diode 54A, 600V, TC = 25oC [ /Title This IGBT was designed for optimum performance in the 600V Switching SOA Capability (HGT demanding world of motor control operation as well as other Typical Fall Time at TJ = 150oC . . . . . . . . .

 7.1. Size:164K  fairchild semi
 hgtg27n120bn hgt5a27n120bn.pdf 

HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oC Punch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capability of the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

 7.2. Size:378K  onsemi
 hgtg27n120bn.pdf 

NPT Series N-Channel IGBT 72 A, 1200 V HGTG27N120BN The HGTG27N120BN is Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar www.onsemi.com transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. C The