MMG150Q060B6HN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG150Q060B6HN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 420 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
MMG150Q060B6HN Datasheet (PDF)
mmg150q060b6hn.pdf

MMG150Q060B6HN 600V 150A IGBT Module May 2013 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS GQ Series Module High frequ
mmg150q120b.pdf

MMG150Q120B 1200V 150A IGBT Module February 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS Inverter Convertor GQ Series Module Welder SMPS and UPS Induction Heating ABSOLUTE MAXIM
mmg150q120b6hn.pdf

MMG150Q120B6HN1200V 150A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg150q120b6tn.pdf

MMG150Q120B6TN1200V 150A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesA
Otros transistores... MMG400K120U6UN , MMG150D120B6UN , MMG300D060B6N , MMG300D170B6EN , MMG400D060B6EN , SKM200GAL123DKLD110 , MMG200D120B6UN , MMG100Q120B6TN , IRG7R313U , MMG150Q120B , MMG150Q120B6HN , MMG400D120B6TN , MMG400D120UA6TN , MMG400KR120U , MMG450WB120B6TN , MMG400KR060U , 50MT060WHTAPBF .
History: 6MBI150VX-060-50 | IXGH30N60B | MMG15CB120XB6TC | NGTB50N120FL2WG | IRG4BC30UD | IRG7PH35UD1M | IKW50N65WR5
History: 6MBI150VX-060-50 | IXGH30N60B | MMG15CB120XB6TC | NGTB50N120FL2WG | IRG4BC30UD | IRG7PH35UD1M | IKW50N65WR5



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
go42n10 | 2sa970 datasheet | 2sc1627 | aoe6936 datasheet | g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent