MMG150Q060B6HN IGBT. Datasheet pdf. Equivalent
Type Designator: MMG150Q060B6HN
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 420 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 80 nS
Qgⓘ - Total Gate Charge, typ: 920 nC
Package: MODULE
MMG150Q060B6HN Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG150Q060B6HN Datasheet (PDF)
mmg150q060b6hn.pdf
MMG150Q060B6HN 600V 150A IGBT Module May 2013 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS GQ Series Module High frequ
mmg150q120b.pdf
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mmg150q120b6hn.pdf
MMG150Q120B6HN1200V 150A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg150q120b6tn.pdf
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Datasheet: MMG400K120U6UN , MMG150D120B6UN , MMG300D060B6N , MMG300D170B6EN , MMG400D060B6EN , SKM200GAL123DKLD110 , MMG200D120B6UN , MMG100Q120B6TN , FGPF4633 , MMG150Q120B , MMG150Q120B6HN , MMG400D120B6TN , MMG400D120UA6TN , MMG400KR120U , MMG450WB120B6TN , MMG400KR060U , 50MT060WHTAPBF .
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