50MT060WHTAPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

50MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 AFEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoftreverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP Speed 60 kHz

VS-50MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp Speed IGBT), 114 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP

VS-150MT060WDFwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Dual ForwardFEATURES Buck PFC stage with warp 3 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial levelMTP Material categor

50MT060ULSTAPbFVishay High Power Products"Low Side Chopper" IGBT MTP(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverseRoHSrecoveryCOMPLIANT Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation

50MT060ULSTAPbFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverserecovery Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation UL ap