50MT060WHTAPBF Даташит. Аналоги. Параметры и характеристики.
Наименование: 50MT060WHTAPBF
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 658 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
Coesⓘ - Выходная емкость, типовая: 510 pF
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
50MT060WHTAPBF Datasheet (PDF)
50mt060whtapbf.pdf

50MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 AFEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoftreverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP Speed 60 kHz
vs-50mt060whtapbf.pdf

VS-50MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp Speed IGBT), 114 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP
vs-150mt060wdf.pdf

VS-150MT060WDFwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Dual ForwardFEATURES Buck PFC stage with warp 3 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial levelMTP Material categor
50mt060ulstapbf.pdf

50MT060ULSTAPbFVishay High Power Products"Low Side Chopper" IGBT MTP(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverseRoHSrecoveryCOMPLIANT Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IXYH50N120C3D1 | CM75DY-28H | IXGH48N60A3 | VS-GT400TH120N | MMG150HB060B6EN | GT50L101 | RGT8BM65D
History: IXYH50N120C3D1 | CM75DY-28H | IXGH48N60A3 | VS-GT400TH120N | MMG150HB060B6EN | GT50L101 | RGT8BM65D



Список транзисторов
Обновления
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