IRGPS66160D Todos los transistores

 ..1. Size:661K  international rectifier
 irgps66160d.pdf

IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100 C tSC 5 s, TJ(max) = 175 C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF n-channel Super 247 Applications Welding G C E H Bridge Converters Gate Collector Emitter Features Benefits Low VCE(ON) and Switching Losses H

 8.1. Size:52K  international rectifier
 irgps60b120kd.pdf

PROVISIONAL PD - 94239 IRGPS60B120KD Motor Control CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features Low VCE(on) Non Punch Through IGBT Technology VCE(on) typ. = 2.5V Low Diode VF 10 s Short Circuit Capability G Square RBSOA @VGE = 15V, IC = 60A Ultrasoft Diode Reverse Recovery Characteristics E P

 9.1. Size:113K  international rectifier
 irgps40b120u.pdf

PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. 10 s Short Circuit Capability. VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, Super-247 Package. E n-channel ICE = 40A, Tj=25 C Benefits Benchmark Efficiency for Motor Control

 9.2. Size:306K  international rectifier
 auirgps4067d1.pdf

PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 160A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses 6 s SCSOA G tSC 6 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(on) typ. = 1.70V Positive VCE (on) Tempera

 9.3. Size:272K  international rectifier
 irgps4067d.pdf

PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC(Nominal) = 120A 5 s SCSOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) typ. = 1.70V

 9.4. Size:134K  international rectifier
 irgps40b120ud.pdf

PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. Low Diode VF. VCE(on) typ. = 3.12V 10 s Short Circuit Capability. Square RBSOA. G @ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi

 9.5. Size:335K  international rectifier
 irgps46160d.pdf

IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100 C E tSC 5 s, TJ(max) = 175 C C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of a

 9.6. Size:438K  international rectifier
 irgps46160dpbf.pdf

IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100 C E tSC 5 s, TJ(max) = 175 C C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of

 9.7. Size:879K  infineon
 auirgps4070d0.pdf

AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100 C 6 s SCSOA G tsc 6 s, TJ(MAX) = 175 C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V