All IGBT. IRGPS66160D Datasheet

 

IRGPS66160D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGPS66160D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 750

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 240

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 75

Maximum Collector Capacity (Cc), pF: 470

Package: TO274AA

IRGPS66160D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGPS66160D Datasheet (PDF)

0.1. irgps66160d.pdf Size:661K _international_rectifier

IRGPS66160D
IRGPS66160D

IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100C tSC 5s, TJ(max) = 175C GVCE(ON) typ. = 1.65V @ IC = 120A EIRGPS66160DPbFn-channelSuper247Applications Welding G C E H Bridge Converters Gate Collector EmitterFeatures Benefits Low VCE(ON) and Switching Losses H

8.1. irgps60b120kd.pdf Size:52K _international_rectifier

IRGPS66160D
IRGPS66160D

PROVISIONALPD - 94239IRGPS60B120KD Motor Control CoPack IGBTINSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 1200VFeatures Low VCE(on) Non Punch Through IGBT TechnologyVCE(on) typ. = 2.5V Low Diode VF 10s Short Circuit CapabilityG Square RBSOA@VGE = 15V, IC = 60A Ultrasoft Diode Reverse Recovery CharacteristicsE P

 9.1. irgps4067d.pdf Size:272K _international_rectifier

IRGPS66160D
IRGPS66160D

PD - 97736IRGPS4067DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching LossesIC(Nominal) = 120A 5s SCSOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.70V

9.2. irgps46160d.pdf Size:335K _international_rectifier

IRGPS66160D
IRGPS66160D

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a

 9.3. irgps40b120u.pdf Size:113K _international_rectifier

IRGPS66160D
IRGPS66160D

PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control

9.4. irgps40b120ud.pdf Size:134K _international_rectifier

IRGPS66160D
IRGPS66160D

PD- 94240AIRGPS40B120UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. Low Diode VF.VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA.G@ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi

 9.5. auirgps4067d1.pdf Size:306K _international_rectifier

IRGPS66160D
IRGPS66160D

PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera

Datasheet: MMG450WB120B6TN , MMG400KR060U , 50MT060WHTAPBF , FF200R06KE3 , IKQ100N60TA , IGW100N60H3 , MMG200S060B6N , IRGPS46160D , 1MBH50D-060 , MMG150D120B6TN , MMG150Q120B6TN , NSGM100GB120 , APT75GN120B2G , APT75GN120LG , IKQ120N60TA , KM435A , MMG100DR120B .

 

 
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