HGTG34N100E2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTG34N100E2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
trⓘ - Tiempo de subida, typ: 150 nS
Encapsulados: TO247
Búsqueda de reemplazo de HGTG34N100E2 IGBT
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HGTG34N100E2 datasheet
..1. Size:51K 1
hgtg34n100e2.pdf 
S E M I C O N D U C T O R HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1000V EMITTER Latch Free Operation COLLECTOR Typical Fall Time - 710ns COLLECTOR GATE (BOTTOM SIDE High Input Impedance METAL) Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best fea
6.1. Size:51K harris semi
hgtg34n1.pdf
S E M I C O N D U C T O R HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1000V EMITTER Latch Free Operation COLLECTOR Typical Fall Time - 710ns COLLECTOR GATE (BOTTOM SIDE High Input Impedance METAL) Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best fea
9.2. Size:81K 1
hgtg30n120cn.pdf
HGTG30N120CN Data Sheet January 2000 File Number 4483.3 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through (NPT) IGBT 75A, 1200V, TC = 25oC design. This is a new member of the MOS gated high 1200V Switching SOA Capability voltage switching IGBT family. IGBTs combine the best Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 15
9.3. Size:212K fairchild semi
hgtg30n60b3d.pdf
HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor
9.4. Size:204K fairchild semi
hgtg30n60b3.pdf
HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
9.5. Size:173K fairchild semi
hgtg30n60a4d.pdf
HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs 600V Switching SOA Capability and bipolar transistors. This device has the high input impedan
9.6. Size:161K fairchild semi
hgtg30n60a4.pdf
HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a 600V Switching SOA Capability MOSFET and the low on-state co
9.7. Size:268K fairchild semi
hgtg30n60c3d.pdf
HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs Short Circuit Rating and bipolar transistors
9.8. Size:422K onsemi
hgtg30n60b3d.pdf
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D www.onsemi.com The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varie
9.9. Size:453K onsemi
hgtg30n60b3.pdf
IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss www.onsemi.com of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low VCES IC conduction losses are essential, such as UPS, solar inverter and power 12
9.10. Size:187K onsemi
hgtg30n60a4d.pdf
HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs 600V Switching SOA Capability and bipolar transistors. This device has the high input impedan
9.11. Size:420K onsemi
hgtg30n60c3d.pdf
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D www.onsemi.com The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varie
9.12. Size:47K harris semi
hgtg32n6.pdf
S E M I C O N D U C T O R HGTG32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 32A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time - 600ns COLLECTOR GATE (BOTTOM SIDE High Input Impedance METAL) Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combin- ing the best features of
9.13. Size:127K harris semi
hgtg30n6.pdf
S E M I C O N D U C T O R HGTG30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 63A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 230ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG30N60C3D is a MOS gated high voltage swit
9.14. Size:52K harris semi
hgtg30n1.pdf
S E M I C O N D U C T O R HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 30A, 1200V Latch Free Operation EMITTER COLLECTOR Typical Fall Time - 580ns GATE High Input Impedance COLLECTOR (BOTTOM SIDE Low Conduction Loss METAL) Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best fea
Otros transistores... HGTG27N60C3R
, HGTG30N120CN
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, HGTG40N60C3
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