All IGBT. HGTG34N100E2 Datasheet

 

HGTG34N100E2 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG34N100E2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 55

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 100

Package: TO247

HGTG34N100E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG34N100E2 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG34N100E2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 55

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 100

Package: TO247

HGTG34N100E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG34N100E2 Datasheet (PDF)

6.1. hgtg34n1.pdf Size:51K _harris_semi

HGTG34N100E2
HGTG34N100E2

S E M I C O N D U C T O R HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1000V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time - 710ns COLLECTOR GATE (BOTTOM SIDE • High Input Impedance METAL) • Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best fea

9.1. hgtg30n60a4d.pdf Size:173K _fairchild_semi

HGTG34N100E2
HGTG34N100E2

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage • 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs • 600V Switching SOA Capability and bipolar transistors. This device has the high input impedan

9.2. hgtg30n60b3.pdf Size:204K _fairchild_semi

HGTG34N100E2
HGTG34N100E2

HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching • 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a • Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC

 9.3. hgtg30n60c3d.pdf Size:268K _fairchild_semi

HGTG34N100E2
HGTG34N100E2

HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs • Short Circuit Rating and bipolar transistors

9.4. hgtg30n60a4.pdf Size:161K _fairchild_semi

HGTG34N100E2
HGTG34N100E2

 HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching • >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar • 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a • 600V Switching SOA Capability MOSFET and the low on-state co

 9.5. hgtg30n60b3d.pdf Size:212K _fairchild_semi

HGTG34N100E2
HGTG34N100E2

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

9.6. hgtg30n6.pdf Size:127K _harris_semi

HGTG34N100E2
HGTG34N100E2

S E M I C O N D U C T O R HGTG30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 63A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 230ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG30N60C3D is a MOS gated high voltage swit

9.7. hgtg30n1.pdf Size:52K _harris_semi

HGTG34N100E2
HGTG34N100E2

S E M I C O N D U C T O R HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 30A, 1200V • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR (BOTTOM SIDE • Low Conduction Loss METAL) Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best fea

9.8. hgtg32n6.pdf Size:47K _harris_semi

HGTG34N100E2
HGTG34N100E2

S E M I C O N D U C T O R HGTG32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 32A, 600V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time - 600ns COLLECTOR GATE (BOTTOM SIDE • High Input Impedance METAL) • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combin- ing the best features of

Datasheet: HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , RJP63K2DPK-M0 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D .

 

 
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