IQG1B600N120B4 Todos los transistores

 

IQG1B600N120B4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IQG1B600N120B4
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 99 nS
   Coesⓘ - Capacitancia de salida, typ: 2840 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

IQG1B600N120B4 Datasheet (PDF)

 ..1. Size:139K  iqxprz
 iqg1b600n120b4.pdf pdf_icon

IQG1B600N120B4

IQG1B600N120B4PRELIMINARY DATASHEETIGBT Module in iQPaK3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliantMAXIMUM RATINGSParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 600CoT =80 CCPeak collector currentI 1200 ACpulsoT =80 CC

 9.1. Size:126K  iqxprz
 iqg1b228n120b4.pdf pdf_icon

IQG1B600N120B4

IQG1B228N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 228CoT =80 CCPeak collect

 9.2. Size:139K  iqxprz
 iqg1b300n120b4.pdf pdf_icon

IQG1B600N120B4

IQG1B300N120B4PRELIMINARY DATASHEETIGBT Module in iQpak3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 300CoT =80 CCPeak collect

 9.3. Size:125K  iqxprz
 iqg1b150n120b4.pdf pdf_icon

IQG1B600N120B4

IQG1B150N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 150CoT =80 CCPeak collect

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: VS-GT400TH120N | RGT8BM65D | APT15GT60BRG | FF150R12YT3 | IXGH48N60A3 | GT50L101

 

 
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