IQGB228N120GB4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB228N120GB4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 228 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 140 nS
Coesⓘ - Capacitancia de salida, typ: 1200 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
IQGB228N120GB4 Datasheet (PDF)
iqgb228n120gb4.pdf

IQGB228N120GB4PRELIMINARY DATASHEETIGBT Module in iQPakTM2 PackagePFC-Buck configuration Ultra low loss IGBT Highly rugged SPT designMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 228CoT =80 CCPeak collector current I 456CMADiode forward currentI 200
iqgb228n120ga4.pdf

IQGB228N120GA4PRELIMINARY DATASHEETIGBT Module in iQPakTM2 PackagePFC-Boost configuration Ultra low loss IGBT Highly rugged SPT designMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltageV 1200 VCESOTvj = 25 CDC collector currentI 228CoT =80 CCRepetitive peak collector current I 456 ACRMDi
iqgb228n120i4.pdf

IQGB228N120I4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 228CoT =80 CCPeak collector current I 456CMA
Otros transistores... IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 , IRG4PH50UD , IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 .
History: ISL9V3036S3S | IXXK200N65B4 | TGPF15N60FDR | MMG25H120XB6TN | 2MBI200TA-060 | IXGH50N60B2 | SRE100N065FSUD6
History: ISL9V3036S3S | IXXK200N65B4 | TGPF15N60FDR | MMG25H120XB6TN | 2MBI200TA-060 | IXGH50N60B2 | SRE100N065FSUD6



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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