IQGB300N120I4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB300N120I4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 1420 pF
Encapsulados: MODULE
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IQGB300N120I4 datasheet
iqgb300n120i4.pdf
IQGB300N120I4 PRELIMINARY DATASHEET IGBT Module in iQpak 2 Package Half-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 300 C o T =80 C C Peak collector current I 600
iqgb300n120ga4.pdf
IQGB300N120GA4 PRELIMINARY DATASHEET IGBT Module in iQpak 2 Package PFC Boost Configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 300 C o T =80 C C Peak collector c
iqgb300n60i4.pdf
IQGB300N60I4 PRELIMINARY DATASHEET 600V 300A, N-Channel IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, Half-Bridge Configuration in iQPak 2 Package FEATURES Very high switching speed Very low V CE(sat) Short circuit withstand time 5 us Very tight parameter distribution High ruggedness, temperature stability Very sof
Otros transistores... IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , GT30J122 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 .
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