IQGB300N120I4 IGBT. Datasheet pdf. Equivalent
Type Designator: IQGB300N120I4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 1420 pF
Qgⓘ - Total Gate Charge, typ: 3060 nC
Package: MODULE
IQGB300N120I4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IQGB300N120I4 Datasheet (PDF)
iqgb300n120i4.pdf
IQGB300N120I4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector current I 600
iqgb300n120ga4.pdf
IQGB300N120GA4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackagePFC Boost Configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector c
iqgb300n60i4.pdf
IQGB300N60I4PRELIMINARY DATASHEET600V 300A, N-Channel IGBT in Trench & Field Stoptechnology with soft, fast recovery anti-paralleldiode, Half-Bridge Configuration in iQPak2PackageFEATURES Very high switching speed Very low VCE(sat) Short circuit withstand time 5 us Very tight parameter distribution High ruggedness, temperature stability Very sof
Datasheet: IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , IHW20N120R2 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 .
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