IQIB150N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQIB150N60B3
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 576 pF
Qgⓘ - Carga total de la puerta, typ: 940 nC
Paquete / Cubierta: SOT227
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IQIB150N60B3 Datasheet (PDF)
iqib150n60b3.pdf
IQIB150N60B3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed Very low VCE(sat1 3 Short circuit withstand time 5 us Designed for frequency converters andUPS Very tight parameter distribution2 4 High ruggedness, temperature stability- Parallel switching capability Pb-free lead finish
iqib100n60d3.pdf
IQIB100N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1 Very high switching speed Very low V CE(sat) Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability 3 - parallel switching capability 2, 4
iqib100n60a3.pdf
IQIB100N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package 1 2 3 Very high switching speed 1 Very low VCE(sat 4 Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability 3 - Parallel switching capability Pb-free lead finish; RoHS compliant 2
Otros transistores... IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IRG4PC40W , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2