IQIB150N60B3 Datasheet and Replacement
Type Designator: IQIB150N60B3
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 576 pF
Package: SOT227
- IGBT Cross-Reference
IQIB150N60B3 Datasheet (PDF)
iqib150n60b3.pdf

IQIB150N60B3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed Very low VCE(sat1 3 Short circuit withstand time 5 us Designed for frequency converters andUPS Very tight parameter distribution2 4 High ruggedness, temperature stability- Parallel switching capability Pb-free lead finish
iqib100n60d3.pdf

IQIB100N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1 Very high switching speed Very low V CE(sat) Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability 3 - parallel switching capability 2, 4
iqib100n60a3.pdf

IQIB100N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package 1 2 3 Very high switching speed 1 Very low VCE(sat 4 Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability 3 - Parallel switching capability Pb-free lead finish; RoHS compliant 2
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - IQIB150N60B3 transistor datasheet
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History: NCE30TD60BP | FD200R12PT4_B6



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