IXYN120N120C3 Todos los transistores

 ..1. Size:212K  ixys
 ixyn120n120c3.pdf

Advance Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYN120N120C3 GenX3TM IC110 = 120A VCE(sat) 3.20V tfi(typ) = 96ns High-Speed IGBTs for 20-50 kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE

 6.1. Size:226K  ixys
 ixyn120n65b3d1.pdf

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN120N65B3D1 IC110 = 120A GenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107ns Extreme Light Punch through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ

 6.2. Size:227K  ixys
 ixyn120n65c3d1.pdf

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN120N65C3D1 IC110 = 100A GenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46ns Extreme Light Punch through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ =

 9.1. Size:215K  ixys
 ixyn100n65a3.pdf

Preliminary Technical Information VCES = 650V 650V XPTTM IGBT IXYN100N65A3 IC110 = 100A GenX3TM VCE(sat) 1.80V tfi(typ) = 122ns Ultra Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G

 9.2. Size:233K  ixys
 ixyn100n65c3h1.pdf

Preliminary Technical Information VCES = 650V XPTTM 650V GenX3TM IXYN100N65C3H1 IC110 = 90A w/ Sonic Diode VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, R

 9.3. Size:226K  ixys
 ixyn100n120c3h1.pdf

1200V XPTTM IGBT VCES = 1200V IXYN100N120C3H1 GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES C

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 ixyn100n65b3d1.pdf

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 ixyn150n60b3.pdf

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 ixyn100n120c3.pdf

 9.7. Size:184K  ixys
 ixyn100n120b3h1.pdf

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V IXYN100N120B3H1 GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES