IXBF10N300C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXBF10N300C Datasheet (PDF)

..1. Size:228K ixys
ixbf10n300c.pdf pdf_icon

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF10N300CHigh Frequency,IC110 = 10ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMmbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transi

9.1. Size:196K ixys
ixbf14n300.pdf pdf_icon

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF14N300BIMOSFETTM MonolithicIC90 = 14ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

9.2. Size:227K ixys
ixbf15n300c.pdf pdf_icon

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF15N300CHigh Frequency,IC110 = 15ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Tran

9.3. Size:195K ixys
ixbf12n300.pdf pdf_icon

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .