IXBF10N300C PDF and Equivalents Search

 

IXBF10N300C Specs and Replacement

Type Designator: IXBF10N300C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 240 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 29 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Coesⓘ - Output Capacitance, typ: 204 pF

Package: I4PAK

 IXBF10N300C Substitution

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IXBF10N300C datasheet

 ..1. Size:228K  ixys
 ixbf10n300c.pdf pdf_icon

IXBF10N300C

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transi... See More ⇒

 9.1. Size:196K  ixys
 ixbf14n300.pdf pdf_icon

IXBF10N300C

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF14N300 BIMOSFETTM Monolithic IC90 = 14A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒

 9.2. Size:227K  ixys
 ixbf15n300c.pdf pdf_icon

IXBF10N300C

Advance Technical Information High Voltage, VCES = 3000V IXBF15N300C High Frequency, IC110 = 15A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Tran... See More ⇒

 9.3. Size:195K  ixys
 ixbf12n300.pdf pdf_icon

IXBF10N300C

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie... See More ⇒

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Specs: IXYN100N65C3H1, IXYN120N120C3, IXYN120N65B3D1, IXYN120N65C3D1, IXYN150N60B3, IXYN75N65C3D1, IXYN80N90C3H1, IXYN82N120C3, SGT50T65FD1PT, IXBF14N300, IXBF15N300C, IXBF20N360, IXBF22N300, IXBF28N300, IXBF50N360, IXBH10N300, IXBH10N300HV

Keywords - IXBF10N300C transistor spec

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