All IGBT. IXBF10N300C Datasheet

 

IXBF10N300C IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBF10N300C
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 240 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 29 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 204 pF
   Qgⓘ - Total Gate Charge, typ: 208 nC
   Package: I4PAK

 IXBF10N300C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBF10N300C Datasheet (PDF)

 ..1. Size:228K  ixys
 ixbf10n300c.pdf

IXBF10N300C IXBF10N300C

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF10N300CHigh Frequency,IC110 = 10ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMmbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transi

 9.1. Size:196K  ixys
 ixbf14n300.pdf

IXBF10N300C IXBF10N300C

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF14N300BIMOSFETTM MonolithicIC90 = 14ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

 9.2. Size:227K  ixys
 ixbf15n300c.pdf

IXBF10N300C IXBF10N300C

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF15N300CHigh Frequency,IC110 = 15ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Tran

 9.3. Size:195K  ixys
 ixbf12n300.pdf

IXBF10N300C IXBF10N300C

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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