IXBF14N300 Todos los transistores

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IXBF14N300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBF14N300

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120

Tensión colector-emisor (Vce): 3000

Voltaje de saturación colector-emisor (Vce sat): 2.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 28

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 380

Capacitancia de salida (Cc), pF: 50

Empaquetado / Estuche: I4PAK

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IXBF14N300 Datasheet (PDF)

1.1. ixbf14n300.pdf Size:196K _igbt

IXBF14N300
IXBF14N300

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF14N300 BIMOSFETTM Monolithic IC90 = 14A Bipolar MOS Transistor  VCE(sat)  2.7V    (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V 1 2 VGEM Transient ±

5.1. ixbf15n300c.pdf Size:227K _igbt

IXBF14N300
IXBF14N300

Advance Technical Information High Voltage, VCES = 3000V IXBF15N300C High Frequency, IC110 = 15A BiMOSFETTM Monolithic  VCE(sat)   6.0V   Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V 1 2 VGEM Tran

5.2. ixbf12n300.pdf Size:195K _igbt

IXBF14N300
IXBF14N300

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V 1 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V 2 VGES Continuous ± 20 V 5 VGEM Transie

5.3. ixbf10n300c.pdf Size:228K _igbt

IXBF14N300
IXBF14N300

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic  VCE(sat)   6.0V   Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V 1 2 VGEM Transi

Otros transistores... IXYN120N120C3 , IXYN120N65B3D1 , IXYN120N65C3D1 , IXYN150N60B3 , IXYN75N65C3D1 , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IRG4PC50UD , IXBF15N300C , IXBF20N360 , IXBF22N300 , IXBF28N300 , IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV .

 


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