IXBF22N300 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXBF22N300 datasheet

..1. Size:196K ixys
ixbf22n300.pdf pdf_icon

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient

9.1. Size:197K ixys
ixbf20n300.pdf pdf_icon

High Voltage, High Gain VCES = 3000V IXBF20N300 BIMOSFETTM Monolithic IC110 = 14A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 Isolated Tab 5 VGES Continuous 20 V VGEM Transient 30 V 1 = Ga

9.2. Size:196K ixys
ixbf28n300.pdf pdf_icon

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF28N300 BIMOSFETTM Monolithic IC90 = 28A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient

9.3. Size:229K ixys
ixbf20n360.pdf pdf_icon

Preliminary Technical Information High Voltage, VCES = 3600V IXBF20N360 High Frequency, IC110 = 18A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V 1 2 VGES Continuous 20 V Isolat

Otros transistores... IXYN150N60B3 , IXYN75N65C3D1 , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , IXBF15N300C , IXBF20N360 , RJP30E2DPP-M0 , IXBF28N300 , IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV .