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HGTG7N60A4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTG7N60A4
   Tipo de transistor: IGBT
   Código de marcado: 7N60A4
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Qgⓘ - Carga total de la puerta, typ: 37 nC
   Paquete / Cubierta: TO247
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HGTG7N60A4 Datasheet (PDF)

 ..1. Size:531K  1
 hgtd7n60a4s hgtg7n60a4 hgtp7n60a4.pdf pdf_icon

HGTG7N60A4

 ..2. Size:173K  fairchild semi
 hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf pdf_icon

HGTG7N60A4

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 ..3. Size:242K  onsemi
 hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf pdf_icon

HGTG7N60A4

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 0.1. Size:537K  onsemi
 hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf pdf_icon

HGTG7N60A4

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar

MOSTRAR MÁS

Otros transistores... HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , IHW20N120R2 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 .

History: SGB20N60 | HGTG20N60A4D | GT50JR22 | RJH60M6DPQ-A0 | IXGK120N60B | IHD06N60RA | IRGSL8B60K

 

 
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