IXBH14N300HV - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBH14N300HV
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 38 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 380 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Qgⓘ - Carga total de la puerta, typ: 62 nC
Paquete / Cubierta: TO247HV
Búsqueda de reemplazo de IXBH14N300HV IGBT
IXBH14N300HV Datasheet (PDF)
ixbh14n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA14N300HVBIMOSFETTM MonolithicIXBH14N300HVIC110 = 14ABipolar MOS TransistorVCE(sat) 2.7VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM
ixbh15n140 ixbh15n160.pdf
High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 15N160 IC25 = 15 AMOS Transistor VCE(sat) = 5.8 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features15N140 15N160 International standard packageVCES TJ = 25C to 150C 140
ixbh15n170 ixbt15n170.pdf
Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24
ixbh10n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBH10N300BIMOSFETTM MonolithicIC110 = 10ABipolar MOS TransistorVCE(sat) 3.2VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 7MBR35VM120-50
History: 7MBR35VM120-50
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