All IGBT. IXBH14N300HV Datasheet

 

IXBH14N300HV Datasheet and Replacement


   Type Designator: IXBH14N300HV
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 380 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO247HV
 

 IXBH14N300HV substitution

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IXBH14N300HV Datasheet (PDF)

 ..1. Size:247K  ixys
 ixbh14n300hv.pdf pdf_icon

IXBH14N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA14N300HVBIMOSFETTM MonolithicIXBH14N300HVIC110 = 14ABipolar MOS TransistorVCE(sat) 2.7VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM

 9.1. Size:68K  1
 ixbh15n140 ixbh15n160.pdf pdf_icon

IXBH14N300HV

High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 15N160 IC25 = 15 AMOS Transistor VCE(sat) = 5.8 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features15N140 15N160 International standard packageVCES TJ = 25C to 150C 140

 9.2. Size:155K  1
 ixbh15n170 ixbt15n170.pdf pdf_icon

IXBH14N300HV

Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24

 9.3. Size:157K  ixys
 ixbh10n300.pdf pdf_icon

IXBH14N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBH10N300BIMOSFETTM MonolithicIC110 = 10ABipolar MOS TransistorVCE(sat) 3.2VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30

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Datasheet: IXBF14N300 , IXBF15N300C , IXBF20N360 , IXBF22N300 , IXBF28N300 , IXBF50N360 , IXBH10N300 , IXBH10N300HV , GT30G124 , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV , IXBH20N140 , IXBH20N160 , IXBH20N360HV , IXBH22N300HV .

History: NGTB30N65IHL2 | 1MBI300F-060 | STGB19NC60KD

Keywords - IXBH14N300HV transistor datasheet

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