IXBA16N170AHV - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXBA16N170AHV Datasheet (PDF)

..1. Size:169K ixys
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Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBA16N170AHVBIMOSFETTM MonolithicIXBT16N170AHVIC25 = 16ABipolar MOS TransistorVCE(sat) 6.0VTO-263HV (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VTO-268HV (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM

9.1. Size:247K ixys
ixba14n300hv.pdf pdf_icon

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA14N300HVBIMOSFETTM MonolithicIXBH14N300HVIC110 = 14ABipolar MOS TransistorVCE(sat) 2.7VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM

9.2. Size:271K ixys
ixba10n300hv.pdf pdf_icon

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBA10N300HVBIMOSFETTM MonolithicIXBH10N300HVIC110 = 10ABipolar MOS TransistorVCE(sat) 2.8VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V

9.3. Size:246K ixys
ixba12n300hv.pdf pdf_icon

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .