IXBA16N170AHV Specs and Replacement
Type Designator: IXBA16N170AHV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 16 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Package: TO263HV IXBA16N170AHV Substitution - IGBT ⓘ Cross-Reference Search
IXBA16N170AHV datasheet
ixba16n170ahv.pdf
Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor VCE(sat) 6.0V TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V TO-268HV (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM... See More ⇒
ixba14n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA14N300HV BIMOSFETTM Monolithic IXBH14N300HV IC110 = 14A Bipolar MOS Transistor VCE(sat) 2.7V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM... See More ⇒
ixba10n300hv.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor VCE(sat) 2.8V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V ... See More ⇒
ixba12n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V TO-268 (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Trans... See More ⇒
Specs: IXBF28N300, IXBF50N360, IXBH10N300, IXBH10N300HV, IXBH14N300HV, IXBA10N300HV, IXBA12N300HV, IXBA14N300HV, FGH60N60SFD, IXBH20N140, IXBH20N160, IXBH20N360HV, IXBH22N300HV, IXBH40N140, IXBH42N250, IXBH42N300HV, IXBJ40N140
Keywords - IXBA16N170AHV transistor spec
IXBA16N170AHV cross reference
IXBA16N170AHV equivalent finder
IXBA16N170AHV lookup
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