All IGBT. IXBA16N170AHV Datasheet

 

IXBA16N170AHV IGBT. Datasheet pdf. Equivalent

Type Designator: IXBA16N170AHV

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 1700

Collector-Emitter saturation Voltage |Vcesat|, V: 6

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 16

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 90

Package: TO263HV

IXBA16N170AHV Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBA16N170AHV Datasheet (PDF)

1.1. ixba16n170ahv.pdf Size:169K _igbt

IXBA16N170AHV
IXBA16N170AHV

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor  VCE(sat)   6.0V   TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V TO-268HV (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1M 1700 V VGES Continuous ± 20 V VGEM

5.1. ixba10n300hv.pdf Size:271K _igbt

IXBA16N170AHV
IXBA16N170AHV

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor  VCE(sat)   2.8V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V

5.2. ixba14n300hv.pdf Size:247K _igbt

IXBA16N170AHV
IXBA16N170AHV

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA14N300HV BIMOSFETTM Monolithic IXBH14N300HV IC110 = 14A Bipolar MOS Transistor  VCE(sat)   2.7V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM

 5.3. ixba12n300hv.pdf Size:246K _igbt

IXBA16N170AHV
IXBA16N170AHV

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

Datasheet: IXBF28N300 , IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , FGA25N120ANTD , IXBH20N140 , IXBH20N160 , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 .

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