All IGBT. IXBA16N170AHV Datasheet

 

IXBA16N170AHV IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBA16N170AHV
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 65 nC
   Package: TO263HV

 IXBA16N170AHV Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBA16N170AHV Datasheet (PDF)

 ..1. Size:169K  ixys
 ixba16n170ahv.pdf

IXBA16N170AHV IXBA16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBA16N170AHVBIMOSFETTM MonolithicIXBT16N170AHVIC25 = 16ABipolar MOS TransistorVCE(sat) 6.0VTO-263HV (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VTO-268HV (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM

 9.1. Size:247K  ixys
 ixba14n300hv.pdf

IXBA16N170AHV IXBA16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA14N300HVBIMOSFETTM MonolithicIXBH14N300HVIC110 = 14ABipolar MOS TransistorVCE(sat) 2.7VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM

 9.2. Size:271K  ixys
 ixba10n300hv.pdf

IXBA16N170AHV IXBA16N170AHV

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBA10N300HVBIMOSFETTM MonolithicIXBH10N300HVIC110 = 10ABipolar MOS TransistorVCE(sat) 2.8VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V

 9.3. Size:246K  ixys
 ixba12n300hv.pdf

IXBA16N170AHV IXBA16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans

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