All IGBT. IXBA16N170AHV Datasheet

 

IXBA16N170AHV Datasheet and Replacement


   Type Designator: IXBA16N170AHV
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qg ⓘ - Total Gate Charge, typ: 65 nC
   Package: TO263HV
 

 IXBA16N170AHV substitution

   - IGBT ⓘ Cross-Reference Search

 

IXBA16N170AHV Datasheet (PDF)

 ..1. Size:169K  ixys
 ixba16n170ahv.pdf pdf_icon

IXBA16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBA16N170AHVBIMOSFETTM MonolithicIXBT16N170AHVIC25 = 16ABipolar MOS TransistorVCE(sat) 6.0VTO-263HV (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VTO-268HV (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM

 9.1. Size:247K  ixys
 ixba14n300hv.pdf pdf_icon

IXBA16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA14N300HVBIMOSFETTM MonolithicIXBH14N300HVIC110 = 14ABipolar MOS TransistorVCE(sat) 2.7VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM

 9.2. Size:271K  ixys
 ixba10n300hv.pdf pdf_icon

IXBA16N170AHV

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBA10N300HVBIMOSFETTM MonolithicIXBH10N300HVIC110 = 10ABipolar MOS TransistorVCE(sat) 2.8VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V

 9.3. Size:246K  ixys
 ixba12n300hv.pdf pdf_icon

IXBA16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans

SHOW MORE

Datasheet: IXBF28N300 , IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IKW75N60T , IXBH20N140 , IXBH20N160 , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 .

History: HGTP2N120CN | FF225R17ME4

Keywords - IXBA16N170AHV transistor datasheet

 IXBA16N170AHV cross reference
 IXBA16N170AHV equivalent finder
 IXBA16N170AHV lookup
 IXBA16N170AHV substitution
 IXBA16N170AHV replacement

 

 
Back to Top

 


 
.