IXBT12N300HV Todos los transistores

 

IXBT12N300HV - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBT12N300HV
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 160 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 140 nS
   Coesⓘ - Capacitancia de salida, typ: 56 pF
   Paquete / Cubierta: TO268-2L
 

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IXBT12N300HV Datasheet (PDF)

 ..1. Size:246K  ixys
 ixbt12n300hv.pdf pdf_icon

IXBT12N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans

 4.1. Size:176K  ixys
 ixbt12n300.pdf pdf_icon

IXBT12N300HV

High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A

 9.1. Size:155K  1
 ixbh15n170 ixbt15n170.pdf pdf_icon

IXBT12N300HV

Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24

 9.2. Size:174K  ixys
 ixbt16n170.pdf pdf_icon

IXBT12N300HV

High Voltage, High GainVCES = 1700VIXBH16N170BIMOSFETTM MonolithicIXBT16N170IC90 = 16ABipolar MOS TransistorVCE(sat) 3.3VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 40 ATO-268 (IXBT

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGP12N100U1 | SGM25PA12A8TFD | IKFW60N60DH3E | IGW40N60DTP | MIO1200-33E10 | OST50N65HXF | OST40N120HEMF

 

 
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