IXBT12N300HV - аналоги и описание IGBT

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V TO-268 (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Trans

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A

Advanced Technical Information VCES = 1700 V High Voltage, High Gain IXBH 15N170 BIMOSFETTM Monolithic IC25 = 25 A IXBT 15N170 Bipolar MOS Transistor VCE(sat) = 3.3 V Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C25 A TO-24

High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor VCE(sat) 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 40 A TO-268 (IXBT

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1

VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C20 A TO-247 AD (IX

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1

VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C20 A TO-247 AD (IX

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor VCE(sat) 6.0V TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V TO-268HV (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM