IXBT22N300HV Todos los transistores

 

IXBT22N300HV - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBT22N300HV
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 290 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 360 nS
   Coesⓘ - Capacitancia de salida, typ: 85 pF
   Paquete / Cubierta: TO268HV
 

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IXBT22N300HV Datasheet (PDF)

 ..1. Size:253K  ixys
 ixbt22n300hv.pdf pdf_icon

IXBT22N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 9.1. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

IXBT22N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 9.2. Size:174K  ixys
 ixbt20n300.pdf pdf_icon

IXBT22N300HV

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V

 9.3. Size:198K  ixys
 ixbt20n300hv.pdf pdf_icon

IXBT22N300HV

Advance Technical InformationHigh Voltage, High GainIXBT20N300HV VCES = 3000VBIMOSFETTM MonolithicIC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-268Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 V C (Tab)VGEM Transient 30 VIC25 TC = 25C 50 A G

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG50J120UZ | IXGN50N120C3H1 | MMG200DR060B

 

 
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