IXBT22N300HV PDF and Equivalents Search

 

IXBT22N300HV Specs and Replacement

Type Designator: IXBT22N300HV

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 360 nS

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO268HV

 IXBT22N300HV Substitution

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IXBT22N300HV datasheet

 ..1. Size:253K  ixys
ixbt22n300hv.pdf pdf_icon

IXBT22N300HV

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM ... See More ⇒

 9.1. Size:180K  ixys
ixbt2n250.pdf pdf_icon

IXBT22N300HV

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC... See More ⇒

 9.2. Size:174K  ixys
ixbt20n300.pdf pdf_icon

IXBT22N300HV

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH20N300 BIMOSFETTM Monolithic IXBT20N300 IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V... See More ⇒

 9.3. Size:198K  ixys
ixbt20n300hv.pdf pdf_icon

IXBT22N300HV

Advance Technical Information High Voltage, High Gain IXBT20N300HV VCES = 3000V BIMOSFETTM Monolithic IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 50 A G... See More ⇒

Specs: IXBJ40N140 , IXBJ40N160 , IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IRGP4086 , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV .

Keywords - IXBT22N300HV transistor spec

 IXBT22N300HV cross reference
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