HGTH12N40E1 Todos los transistores

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 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

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HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

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 hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf

HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC 12A, 400V and 500V VCE(ON) 2.5V Max. EMITTER TFALL 1 s, 0.5 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR High Input Impedance (FLANG

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 hgth12n4.pdf

HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC 12A, 400V and 500V VCE(ON) 2.5V Max. EMITTER TFALL 1 s, 0.5 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR High Input Impedance (FLANG

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 hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo