All IGBT. HGTH12N40E1 Datasheet


HGTH12N40E1 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTH12N40E1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO218

HGTH12N40E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search


HGTH12N40E1 Datasheet (PDF)

6.1. hgth12n4.pdf Size:45K _harris_semi


HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

9.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi


HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo

Datasheet: HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , IXGR48N60C3D1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN .


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