IXXX100N60B3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXX100N60B3H1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 695 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 475 pF
Paquete / Cubierta: PLUS247
- Selección de transistores por parámetros
IXXX100N60B3H1 Datasheet (PDF)
ixxx100n60b3h1.pdf
VCES = 600VXPTTM 600V IXXK100N60B3H1IC100 = 100AGenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 VETabVGEM Transient 30
ixxk100n60c3h1 ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxx160n65c4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65C4IC110 = 160AGenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)GCSymbol Test Conditions Maximum RatingsETabVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VPLUS247 (IXXX)V
Otros transistores... IXXK110N60B4H1 , IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , IXXQ30N60B3M , FGPF4533 , IXXX110N60B4H1 , IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 .
History: SKM200GAL123D | IXXK200N65B4 | MMG25H120XB6TN | 2MBI200TA-060 | SRE100N065FSUD6 | MMG100HB060B6EN
History: SKM200GAL123D | IXXK200N65B4 | MMG25H120XB6TN | 2MBI200TA-060 | SRE100N065FSUD6 | MMG100HB060B6EN
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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