IXXX110N65B4H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXX110N65B4H1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 880 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 46 nS
Coesⓘ - Capacitancia de salida, typ: 440 pF
Qgⓘ - Carga total de la puerta, typ: 183 nC
Paquete / Cubierta: PLUS247
IXXX110N65B4H1 Datasheet (PDF)
ixxx110n65b4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)
ixxx110n60b4h1.pdf
Advance Technical InformationVCES = 600VXPTTM 600V IXXK110N60B4H1IC100 = 110AGenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous
ixxx160n65c4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65C4IC110 = 160AGenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)GCSymbol Test Conditions Maximum RatingsETabVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VPLUS247 (IXXX)V
ixxx100n60b3h1.pdf
VCES = 600VXPTTM 600V IXXK100N60B3H1IC100 = 100AGenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 VETabVGEM Transient 30
Otros transistores... IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , IXXQ30N60B3M , IXXX100N60B3H1 , IXXX110N60B4H1 , IHW15N120R3 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , IXYH120N65C3 .
History: IRG7PH35U-EP | VS-GB300TH120N | STGB3HF60HD
History: IRG7PH35U-EP | VS-GB300TH120N | STGB3HF60HD
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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