IXYP20N65C3D1M Todos los transistores

 

IXYP20N65C3D1M IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYP20N65C3D1M

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 50 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 67 pF

Encapsulados: TO220F

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IXYP20N65C3D1M datasheet

 ..1. Size:195K  ixys
 ixyp20n65c3d1m.pdf pdf_icon

IXYP20N65C3D1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65C3D1M GenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE =

 1.1. Size:250K  ixys
 ixyp20n65c3d1.pdf pdf_icon

IXYP20N65C3D1M

XPTTM 650V IGBT VCES = 650V IXYA20N65C3D1 GenX3TM w/Diode IC110 = 20A IXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M

 5.1. Size:273K  ixys
 ixyp20n65b3.pdf pdf_icon

IXYP20N65C3D1M

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175 C 650

 5.2. Size:195K  ixys
 ixyp20n65b3d1.pdf pdf_icon

IXYP20N65C3D1M

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65B3D1 GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M

MOSTRAR MÁS

Otros transistores... IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , RJP30E2DPP-M0 , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV .

 

 

 


 
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