IXYP20N65C3D1M PDF and Equivalents Search

 

IXYP20N65C3D1M Specs and Replacement

Type Designator: IXYP20N65C3D1M

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 50 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 18 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 34 nS

Coesⓘ - Output Capacitance, typ: 67 pF

Package: TO220F

 IXYP20N65C3D1M Substitution

- IGBT ⓘ Cross-Reference Search

 

IXYP20N65C3D1M datasheet

 ..1. Size:195K  ixys
 ixyp20n65c3d1m.pdf pdf_icon

IXYP20N65C3D1M

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65C3D1M GenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = ... See More ⇒

 1.1. Size:250K  ixys
 ixyp20n65c3d1.pdf pdf_icon

IXYP20N65C3D1M

XPTTM 650V IGBT VCES = 650V IXYA20N65C3D1 GenX3TM w/Diode IC110 = 20A IXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M ... See More ⇒

 5.1. Size:273K  ixys
 ixyp20n65b3.pdf pdf_icon

IXYP20N65C3D1M

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175 C 650... See More ⇒

 5.2. Size:195K  ixys
 ixyp20n65b3d1.pdf pdf_icon

IXYP20N65C3D1M

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65B3D1 GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M... See More ⇒

SHOW MORE

Specs: IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , RJP30E2DPP-M0 , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV .

Keywords - IXYP20N65C3D1M transistor spec

 IXYP20N65C3D1M cross reference
 IXYP20N65C3D1M equivalent finder
 IXYP20N65C3D1M lookup
 IXYP20N65C3D1M substitution
 IXYP20N65C3D1M replacement

 

 

 


 
↑ Back to Top
.