All IGBT. IXYP20N65C3D1M Datasheet

 

IXYP20N65C3D1M IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYP20N65C3D1M
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 67 pF
   Qgⓘ - Total Gate Charge, typ: 30 nC
   Package: TO220F

 IXYP20N65C3D1M Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYP20N65C3D1M Datasheet (PDF)

 ..1. Size:195K  ixys
 ixyp20n65c3d1m.pdf

IXYP20N65C3D1M IXYP20N65C3D1M

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

 1.1. Size:250K  ixys
 ixyp20n65c3d1.pdf

IXYP20N65C3D1M IXYP20N65C3D1M

XPTTM 650V IGBT VCES = 650VIXYA20N65C3D1GenX3TM w/Diode IC110 = 20AIXYP20N65C3D1 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M

 5.1. Size:273K  ixys
 ixyp20n65b3.pdf

IXYP20N65C3D1M IXYP20N65C3D1M

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650

 5.2. Size:195K  ixys
 ixyp20n65b3d1.pdf

IXYP20N65C3D1M IXYP20N65C3D1M

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYP20N65B3D1GenX3TM w/Diode IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE = 1M

Datasheet: IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , FGA25N120ANTD , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV .

 

 
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